AOH011V12AM2 Description
AOH011V12AM2 1200V αSiC Silicon Carbide Half-Bridge Module.
AOH011V12AM2 Key Features
- Proprietary αSiC MOSFET technology
- 1200 V/11mΩ Half-Bridge topology
- High-frequency & high-efficiency performance
- Integrated thermistor & press-fit pin features