Datasheet Details
| Part number | AOI2606 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 360.83 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AOI2606-AlphaOmegaSemiconductors.pdf |
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Overview: AOD2606/AOI2606 60V N-Channel MOSFET General.
| Part number | AOI2606 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 360.83 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AOI2606-AlphaOmegaSemiconductors.pdf |
|
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|
• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 60V 46A < 6.8mΩ Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested TO-252 TO-251A DPAK IPAK D Top View Bottom View Top View Bottom View D D D D S G Orderable Part Number AOD2606 AOI2606 G S S D G Package Type TO-252 TO-251A Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike Power Dissipation B 10μs TC=25°C TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 16 41 Maximum Junction-to-Case Steady-State RqJC 0.8 G D S Form Tape & Reel Tube G S Minimum Order Quantity 2500 4000 Maximum 60 ±20 46 36 184 14 11 60 180 72 150 75 2.5 1.6 -55 to 175 Units V V A A A mJ V W W °C Max Units 20 °C/W 50 °C/W 1.0 °C/W Rev.1.1: December 2023 .aosmd.
Page 1 of 6 AOD2606/AOI2606 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.5 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOI2606 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
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