Datasheet Details
| Part number | AOI2610 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 267.01 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AOI2610-AlphaOmegaSemiconductors.pdf |
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Overview: AOD2610/AOI2610 60V N-Channel MOSFET General.
| Part number | AOI2610 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 267.01 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AOI2610-AlphaOmegaSemiconductors.pdf |
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 60V 46A < 10.7mΩ < 13.5mΩ Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested Top View TO-252 DPAK Bottom View D D Top View D TO-251A IPAK Bottom View D D S G Orderable Part Number AOD2610 AOI2610 G S S D G Package Type TO-252 TO-251A G D S Form Tape & Reel Tube G S Minimum Order Quantity 2500 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH C VGS ID IDM IDSM IAS EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 46 36 140 10 8 36 65 72 71.5 35.5 2.5 1.6 -55 to 175 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 15 41 1.7 Max 20 50 2.1 Units °C/W °C/W °C/W Rev.1.0: December 2014 .aosmd.
Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=60V, VGS=0V Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Bo
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOI2610 | N-Channel MOSFET | INCHANGE |
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AOI2610E | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOI2610E | 60V N-Channel MOSFET |
| AOI2606 | 60V N-Channel MOSFET |
| AOI206 | 30V N-Channel MOSFET |
| AOI21357 | P-Channel MOSFET |
| AOI2210 | 200V N-Channel MOSFET |
| AOI280A60 | N-Channel Power Transistor |
| AOI294A | N-Channel MOSFET |
| AOI296A | N-Channel MOSFET |
| AOI2N60 | 2A N-Channel MOSFET |
| AOI2N60A | 2A N-Channel MOSFET |