Datasheet Details
| Part number | AOI280A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 472.85 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AOI280A60-AlphaOmegaSemiconductors.pdf |
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Overview: AOD280A60/AOI280A60 600V, a MOS5 TM N-Channel Power Transistor.
| Part number | AOI280A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 472.85 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AOI280A60-AlphaOmegaSemiconductors.pdf |
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• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies • Micro inverter with DC/AC inverter topology Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 56A < 0.28Ω 23.5nC 3.1mJ TO252 DPAK TO-251A IPAK D Top View Bottom View Top View Bottom View D D D D D D S G S AOD280A60 Orderable Part Number AOD280A60 AOI280A60 G G DS S DG AOI280A60 Package Type TO-252 TO251A Form Tape&Reel Tube G S Minimum Order Quantity 2500 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±20 ±30 14 9 56 3.6 6.5 60 100 20 138 1.1 -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case Symbol RqJA RqCS RqJC Typical 45 -0.7 Maximum 55 0.5 0.9 Units °C/W °C/W °C/W Rev.3.1:January 2022 .aosmd.
Page 1 of 6 AOD280A60/AOI280A60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient I
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