Datasheet Details
| Part number | AOI4126 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 479.11 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOI4126_AlphaOmegaSemiconductors.pdf |
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Overview: AOD4126/AOI4126 100V N-Channel MOSFET SDMOS TM General.
| Part number | AOI4126 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 479.11 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOI4126_AlphaOmegaSemiconductors.pdf |
|
|
|
The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that bines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior.
This universal technology is well suited for PWM, load switching and general purpose applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100V 43A < 24mΩ < 30mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View Bottom View D D Top View TO-251A IPAK D Bottom View D G S G S G S G D S D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain Current A Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A C TC=100° TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum 100 ±25 43 30 100 7.5 6 28 39 100 50 3 1.9 -55 to 175 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 8 35 1 Max 10 42 1.5 Units ° C/W ° C/W ° C/W Rev1 : May 2012 .aosmd.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOI4126 | N-Channel MOSFET | INCHANGE |
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|---|---|
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