Datasheet Details
| Part number | AOI4130 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 313.75 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AOI4130_AlphaOmegaSemiconductors.pdf |
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Overview: AOD4130/AOI4130 60V N-Channel MOSFET General.
| Part number | AOI4130 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 313.75 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AOI4130_AlphaOmegaSemiconductors.pdf |
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The AOD4130/AOI4130 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for boost converters and synchronous rectifiers for consumer, tele, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 60V 30A < 24mW < 30mW TopView TO252 DPAK Bottom View D Top View TO-251A IPAK Bottom View D DS G DG S S D G G G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 30 20 74 6.5 5 27 36.5 52 25 2.5 1.6 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 12.4 34 2.4 Max 20 50 2.9 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1.1: January 2024 .aosmd.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOI4130 | N-Channel MOSFET | INCHANGE |
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|---|---|
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