Datasheet Details
| Part number | AOK065A60FD |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 470.40 KB |
| Description | 600V N-Channel Power Transistor |
| Datasheet | AOK065A60FD-AlphaOmegaSemiconductors.pdf |
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Overview: AOK065A60FD 600V, a MOS5 TM N-Channel Power Transistor General.
| Part number | AOK065A60FD |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 470.40 KB |
| Description | 600V N-Channel Power Transistor |
| Datasheet | AOK065A60FD-AlphaOmegaSemiconductors.pdf |
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Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • PFC and PWM stages (LLC, FSFB,TTF) of Server, Tele, Industrial, UPS, and Solar Inverters 100% UIS Tested 100% Rg Tested Top View TO-247 700V 200A < 0.065Ω 115nC 11.3mJ D S D G AOK065A60FD Orderable Part Number AOK065A60FD Package Type TO247 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Diode reverse recovery ID IDM IAR EAR EAS dv/dt dv/dt Power Dissipation B TC=25°C Derate above 25°C PD Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case Symbol RqJA RqCS RqJC G S Form Tube Minimum Order Quantity 240 Maximum 600 ±20 ±30 50 32 200 15 112 1080 100 20 446 3.6 -55 to 150 300 Units V V V A A mJ mJ V/ns V/ns W W/°C °C °C Maximum 40 0.5 0.28 Units °C/W °C/W °C/W Rev 1.0: November 2022 .aosmd.
Page 1 of 6 AOK065A60FD Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V, TJ=25°C ID=10mA, VGS=0V, TJ=150°C ID=10mA, VGS=0V Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C Gate-Body
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