Datasheet Details
| Part number | AOK125A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 329.24 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AOK125A60-AlphaOmegaSemiconductors.pdf |
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Overview: AOK125A60 600V, a MOS5 TM N-Channel Power Transistor General.
| Part number | AOK125A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 329.24 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AOK125A60-AlphaOmegaSemiconductors.pdf |
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• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC,Flyback and LLC topologies • Micro inverter with DC/AC inverter topology Top View TO-247 Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 100A < 0.125Ω 39nC 6.3mJ D AOK125A60 S D G Orderable Part Number AOK125A60 Package Type TO247 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Diode reverse recovery VDS=0 to 400V,IF<=20A,Tj=25°C VGS ID IDM IAR EAR EAS dv/dt dv/dt di/dt Power Dissipation B TC=25°C Derate above 25°C PD Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case Symbol RqJA RqCS RqJC G Form Tube S Minimum Order Quantity 240 Maximum 600 ±20 ±30 28 18 100 14 98 555 100 20 500 357 2.9 -55 to 150 300 Units V V V A A mJ mJ V/ns V/ns A/us W W/°C °C °C Maximum 40 0.5 0.35 Units °C/W °C/W °C/W Rev3.0: January 2020 .aosmd.
Page 1 of 6 AOK125A60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS Gate-Body l
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