Datasheet Details
| Part number | AOK160A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 465.45 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AOK160A60-AlphaOmegaSemiconductors.pdf |
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Overview: AOK160A60 600V, a MOS5 TM N-Channel Power Transistor General.
| Part number | AOK160A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 465.45 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AOK160A60-AlphaOmegaSemiconductors.pdf |
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• Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies • Micro inverter with DC/AC inverter topology Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested Top View TO-247 700V 96A < 0.16Ω 46nC 4.9mJ D AOK160A60 S D G G S Orderable Part Number AOK160A60 Package Type TO247 Form Tube Minimum Order Quantity 240 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±20 ±30 24 15 96 6 18 172 100 20 250 2.0 -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case Symbol RqJA RqCS RqJC Maximum 40 0.5 0.5 Units °C/W °C/W °C/W Rev.3.1: January 2022 .aosmd.
Page 1 of 6 AOK160A60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage
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