Datasheet Details
| Part number | AOK20B120E1 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 659.13 KB |
| Description | IGBT |
| Datasheet | AOK20B120E1-AlphaOmegaSemiconductors.pdf |
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Overview: AOK20B120E1 1200V, 20A Alpha IGBT TM with Diode General.
| Part number | AOK20B120E1 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 659.13 KB |
| Description | IGBT |
| Datasheet | AOK20B120E1-AlphaOmegaSemiconductors.pdf |
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• Latest AlphaIGBT (α IGBT) technology • Best in Class VCE(SAT) enables high efficiencies • Low turn-off switching loss due to fast turn-off time • Very smooth turn-off current waveforms reduce EMI • Better thermal management • High surge current capability • Minimal gate spike due to high input capacitance Applications • Induction Cooking • Rice Cookers • Microwave Ovens • Other soft switching applications Top View TO-247 Product Summary VCE IC (TC=100°C) VCE(sat) (TC=25°C) 1200V 20A 1.68V C AOK20B120E1 E C G G E Orderable Part Number Package Type Form Minimum Order Quantity AOK20B120E1 TO247 Tube 240 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOK20B120E1 Units Collector-Emitter Voltage V CE 1200 V Gate-Emitter Voltage V GE ±30 V Continuous Collector TC=25°C Current TC=100°C IC 40 20 A Pulsed Collector Current, Limited by TJmax I Cpulse 80 A Non repetitive peak collector currentA I CSM 200 A Turn off SOA, VCE ≤ 600V, Limited by TJmax I LM 80 A Continuous Diode Forward Current TC=25°C TC=100°C IF 40 20 A Diode Pulsed Current, Limited by TJmax I Fpulse 80 A Power Dissipation TC=25°C TC=100°C PD 333 167 W Junction and Storage Temperature Range T J , T STG -55 to 175 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Symbol AOK20B120E1 Units Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case R θ JA R θ JC 40 0.45 °C/W °C/W Maximum Diode Junction-to-Case R θ JC 1.6 °C/W Note A: Capacitor charging saturation current limited by Tjmax<175°C and tp<3µs Rev.1.0: March 2015 .aosmd.
Page 1 of 8 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C TJ=25°C V CE(sat) Collector-Emitter Satu
| Part Number | Description |
|---|---|
| AOK20B120D1 | IGBT |
| AOK20B135D1 | 20A Alpha IGBT |
| AOK20B60D1 | 20A Alpha IGBT |
| AOK20B65M1 | IGBT |
| AOK20B65M2 | 650V 20A IGBT |
| AOK20N60 | N-Channel MOSFET |
| AOK20N60L | N-Channel MOSFET |
| AOK20S60 | 600V 20A MOS Power Transistor |
| AOK20S60L | Power Transistor |
| AOK22N50 | N-Channel MOSFET |