Datasheet Details
| Part number | AOK22N50 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 340.99 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOK22N50_AlphaOmegaSemiconductors.pdf |
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Overview: AOK22N50 500V,22A N-Channel MOSFET General.
| Part number | AOK22N50 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 340.99 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOK22N50_AlphaOmegaSemiconductors.pdf |
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Product Summary The AOK22N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs.
For Halogen Free add "L" suffix to part number: AOK22N50L VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested Top View TO-247 600V@150℃ 22A < 0.26Ω D AOK22N50 S D G Orderable Part Number Package Type AOK22N50L TO-247 Green Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case Symbol RθJA RθCS RθJC G S Form Tube AOK22N50 500 ±30 22 15 88 7 735 1470 5 417 3.3 -55 to 150 300 AOK22N50 40 0.5 0.3 Minimum Order Quantity 240 Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev1: April 2014 .aosmd.
Page 1 of 5 AOK22N50 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=500V, VGS=0V VDS=400V, TJ=125°C IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOK22N50 | N-Channel MOSFET | INCHANGE |
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AOK22N50L | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOK20B120D1 | IGBT |
| AOK20B120E1 | IGBT |
| AOK20B135D1 | 20A Alpha IGBT |
| AOK20B60D1 | 20A Alpha IGBT |
| AOK20B65M1 | IGBT |
| AOK20B65M2 | 650V 20A IGBT |
| AOK20N60 | N-Channel MOSFET |
| AOK20N60L | N-Channel MOSFET |
| AOK20S60 | 600V 20A MOS Power Transistor |
| AOK20S60L | Power Transistor |