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AOK27S60 Datasheet Power Transistor

Manufacturer: Alpha & Omega Semiconductors

Overview: AOK27S60 600V 27A α MOS TM Power Transistor General.

General Description

The AOK27S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.

Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 700V 110A 0.16Ω 26nC 6µJ 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOK27S60L Top View TO-247 D G S G D S AOK27S60 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G TC=25° C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case TC=25° C TC=100° C VGS ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA RθCS RθJC AOK27S60 600 ±30 27 17 110 7.5 110 480 357 2.9 100 20 -55 to 150 300 AOK27S60 40 0.5 0.35 Units V V A A mJ mJ W W/ oC V/ns ° C ° C Units ° C/W ° C/W ° C/W Rev 0: Dec 2011 .aosmd.

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