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AOL1440 Datasheet N-channel Enhancement Mode Field Effect Transistor

Manufacturer: Alpha & Omega Semiconductors

Overview: AOL1440 N-Channel Enhancement Mode Field Effect Transistor General.

General Description

FFeeaattuurreess The AOL1440 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.

This device is ideally suite for use as a low side switch in CPU core power conversion.

-RoHS pliant -Halogen and Antimony Free Green Device* VVDDSS((VV))==2255VV IIDD==7755AA((VVGGSS==1100VV)) RRDDSS(O(ONN))<<33..22mmΩΩ((VVGGSS==2200VV)) RRDDSS(O(ONN))<<44..00mmΩW(V(VGGSS==1120VV) ) RRDDSS(O(ONN))<<55..22mmΩW(V(VGGSS==1102VV) ) UIS Tested UIS Tested Rg,Ciss,Coss,CrsRsgT,eCsitsesd,Coss,Crss Tested Ultra SO-8TM Top View D S G D Bottom tab connected to drain Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C G Current B,G, TC=100°C B ID Pulsed Drain Current IDM Continuous Drain TA=25°C Current G TA=70°C IDSM Avalanche Current C IAR Repetitive avalanche energy L=0.3mHC EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-AmbientA Maximum Junction-to-AmbientA t ≤ 10s Steady-State Symbol RθJA Maximum Junction-to-CaseC Steady-State RθJC G Maximum 25 ±30 85 66 200 21 17 30 135 75 37 2.3 1.4 -55 to 175 Typ 19 45 1.5 S Max 25 55 2 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.

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AOL1440 Distributor