AOL1446 Datasheet | Alpha & Omega Semiconductors

Description The AOL1446 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOL1446 is Pb-free (meets ROHS & Sony 259 specifications). AOL1446L is a Green Product ordering option. AOL1446 and AOL1446L are electrically identical. Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7mΩ (VGS = 10V) RDS(ON) < 11mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8 Top View D Fits SOIC8 footprint ! Bottom tab connected to drain G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS 30 Drain-Source Voltage VGS ±20 Gate-Source Voltage Continuous Drain 85 TC=25°C G B Current 70 ID TC=100°C IDM 200 Pulsed Drain Current Continuous Drain TA=25°C 21 G Current IDSM 16 TA=70°C C Avalanche Current IAR 30 C Repetitive avalanche energy L=0.3m H EAR 135 TC=25°C 100 PD Power Dissipation B TC=100°C 50 TA=25°C PDSM TA=70°C Junction and Storage Temperature Range TJ, TSTG Power Dissipation Units V V A A A m J W W °C 5 3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 19.5 48 1 Max 25 60 1.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. .aosmd. Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) g FS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A VDS=5V, ID=20A Forward Transconductance Diode Forward Voltage IS=1A,V GS=0V Maximum Body-Diode Continuous Current Conditions ID=250 μA, VGS=0V VDS=24V, V GS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250 μA VGS=10V, V DS=5V VGS=10V, ID=20A...