AON3812 Datasheet | Alpha & Omega Semiconductors

Description .. provide Features VDS (V) = 30V ID = 6A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 40mΩ (VGS = 2.5V) The AON3812 uses advanced trench technology to excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its mon-drain configuration. Standard Product AON3812 is Pb-free (meets ROHS & Sony 259 specifications). D1 DFN 3x3 Top View Bottom View S2 G2 S1 G1 D2 G1 D2 D1 D1 S1 1.6KΩ G2 1.6KΩ D2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A Maximum 30 ±12 6 5.3 30 2.2 1.4 -55 to 150 Units V V A TA=25°C F TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 43 77 35 Max 56 95 50 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. .aosmd. AON3812 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±10V VDS=0V, IG=±250u A VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=6A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=6A VGS=2.5V, ID=5.4A g FS VSD IS Forward Transconductance VDS=5V, ID=6A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current ±12 0.6 30 22 31 25 33 24 0.76 1 2.5 330 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 80 10 1.6 6.4 VGS=4.5V, VDS=15V, ID=6A 3.1 2.5 388 VGS=4.5V, VDS=15V, RL=2.5Ω, RGEN=3Ω IF=6A, d I/dt=100A/µs, VGS=-9V IF=6A, d I/dt=100A/µs, VGS=-9V Min 30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS...