Datasheet Details
| Part number | AON4421 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 422.93 KB |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | AON4421-AlphaOmegaSemiconductors.pdf |
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Overview: AON4421 P-Channel Enhancement Mode Field Effect Transistor General.
| Part number | AON4421 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 422.93 KB |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | AON4421-AlphaOmegaSemiconductors.pdf |
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The AON4421 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.
This device is suitable for use as a load switch.
Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) -30V -8A < 26mW < 34mW -RoHS pliant -Halogen Free ESD Protected Top View DFN 3x2 Bottom View Pin 1 D 1 8 D D 2 7D D 3 6D G G 4 5 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -8 -6 -60 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 30 55 Maximum Junction-to-Lead Steady-State RqJL 25 Max 40 70 30 D S Units V V A W °C Units °C/W °C/W °C/W Rev.2.2: August 2023 .aosmd.
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