AON4803 Datasheet | Alpha & Omega Semiconductors

Description The AON4803 uses advanced trench technology to provide excellent R DS(ON), low gate charge and .. operation with gate voltage as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Standard Product AON4803 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = -20V ID = -3.4A (V GS = -4.5V) RDS(ON) < 90mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) RDS(ON) < 165mΩ (VGS = -1.8V) D1 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 D2 G1 S1 G2 S2 DFN3X2-8L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead MOSFET -20 ±8 -3.4 -2.7 -15 1.7 1.1 -55 to 150 Typ 51 88 28 Max 75 110 35 Units V V A VGS TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG Symbol RθJA RθJL W °C Units °C/W Alpha & Omega Semiconductor, Ltd. Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-16V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-3.4A Static Drain-Source On-Resistance TJ=125°C VGS=-2.5V, ID=-2.5A VGS=-1.8V, ID=-1.5A g FS VSD IS Forward Transconductance VDS=-5V, ID=-3.4A 4 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.3 -15 73 103 100 135 7 -0.76 -1 -2 540 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 72 49 12 6.1 VGS=-4.5V, VDS=-10V, ID=-3.4A 0.6 1.6 10 VGS=-4.5V, VDS=-10V, RL=2.9Ω, RGEN=3Ω IF=-3.4A, d I/dt=100A/µs Min -20 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) .. Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current -1 -5 ±100 -0.65 -1 90 125...