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AON4803 Datasheet Field Effect Transistor

Manufacturer: Alpha & Omega Semiconductors

Overview: AON4803 Dual P-Channel Enhancement Mode Field Effect Transistor General.

General Description

The AON4803 uses advanced trench technology to provide excellent R DS(ON), low gate charge and ..

operation with gate voltage as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS (V) = -20V ID = -3.4A (V GS = -4.5V) RDS(ON) < 90mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) RDS(ON) < 165mΩ (VGS = -1.8V) D1 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 D2 G1 S1 G2 S2 DFN3X2-8L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET A t ≤ 10s Maximum Juncti.

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