AON6426L
Description
The AON6426L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Key Features
- DFN5X6 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25° Power Dissipation B Power Dissipation A C S Maximum 30 ±20 24 19 130 14 11 42 88 42 17 2 1.2 -55 to 150
