Datasheet Summary
AON6426L N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON6426L bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Features
VDS (V) = 30V ID = 24A RDS(ON) < 5.5mΩ RDS(ON) < 7.5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V)
- RoHS pliant
- Halogen Free
100% UIS Tested! 100% R g Tested!
Top View Fits SOIC8 footprint !
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