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AON7202 Datasheet 30v N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AON7202 30V N-Channel MOSFET General.

General Description

The AON7202 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Power losses are minimized due to an extremely low bination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode.

Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 30V 40A < 5mΩ < 6.8mΩ DFN 3x3 EP Top View Bottom View Top View Pin 1 1 2 3 4 8 7 6 G 5 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 40 31 150 20 16 38 72 36 14 3.1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 30 60 2.8 Max 40 75 3.4 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1: Feb 2010 .aosmd.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
VBsemi Logo AON7202 N-Channel 30V MOSFET VBsemi

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