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AON7406 Datasheet 30v N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AON7406 30V N-Channel MOSFET General.

General Description

Product Summary • The AON7406 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in SMPS and general purpose applications.

• RoHS and Halogen-Free pliant VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 30V 25A < 17mW < 23mW HBM Class 2 DFN 3x3A Top View Bottom View Top View S D S D S D G G D Pin 1 Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range VDS VGS ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG Maximum 30 ±20 25 15 50 9 7 19 18 15.5 6 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 30 60 Maximum Junction-to-Case Steady-State RqJC 6.6 Max 40 75 8 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.6.1: October 2023 .aosmd.

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