Datasheet Details
| Part number | AON7432 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 268.79 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7432-AlphaOmegaSemiconductors.pdf |
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Overview: AON7432 30V N-Channel MOSFET General.
| Part number | AON7432 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 268.79 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7432-AlphaOmegaSemiconductors.pdf |
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Product Summary The AON7432 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) 100% UIS Tested 100% Rg Tested 30V 18A < 15mΩ < 18mΩ < 24mΩ DFN 3x3 EP Top View Bottom View Pin 1 Top View 1 8 2 7 3 6 4 5 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 18 14 60 10.5 8.5 17 14 20.8 8.3 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 30 60 Maximum Junction-to-Case Steady-State RθJC 5 Max 40 75 6 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 0: Jan.
| Part Number | Description |
|---|---|
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| AON7400A | 30V N-Channel MOSFET |
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| AON7402 | 30V N-Channel MOSFET |
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| AON7404 | 20V N-Channel MOSFET |
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| AON7405 | 30V P-Channel MOSFET |