Datasheet Details
| Part number | AON7502 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 389.19 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7502-AlphaOmegaSemiconductors.pdf |
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Overview: AON7502 30V N-Channel AlphaMOS General.
| Part number | AON7502 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 389.19 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7502-AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 6VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free pliant Product Summary V DS ID (at VGS=10V) 30V 30A < 4.7mΩ < 7.6mΩ RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 6V) Application • Load Switch Applications • Battery Power Management 100% UIS Tested 100% Rg Tested Top View DFN 3x3 EP Bottom View 1 2 3 4 Top View D 8 7 6 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain ID TC=100°C CurrentG Maximum 30 ±25 30 23.5 120 21 17 30 23 36 31 12.5 3.1 2 -55 to 150 Units V V A Pulsed Drain Current Continuous Drain Current Avalanche Current C C IDM TA=25°C TA=70°C IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25°C TC=100°C TA=25°C TA=70°C A A mJ V W W °C Avalanche energy L=0.05mH C VDS Spike Power Dissipation B Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 3.2 Max 40 75 4 Units °C/W °C/W °C/W Rev0: Nov.
2012 .aosmd.
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AON7502 | N-Channel 30V MOSFET | VBsemi |
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|---|---|
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