AONR26309A Description
The AONR26309A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used in inverter and other applications. N-channel Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 40 70 Maximum Junction-to-Case B Steady-State RqJC 15 Thermal Characteristics:.