Datasheet Details
| Part number | AONS1R1A70 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 647.31 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AONS1R1A70-AlphaOmegaSemiconductors.pdf |
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Overview: AONS1R1A70 700V, a MOS5 TM N-Channel Power Transistor General.
| Part number | AONS1R1A70 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 647.31 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AONS1R1A70-AlphaOmegaSemiconductors.pdf |
|
|
|
• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMPS • Charger,Adapter,lighting Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 800V 20A < 1.1Ω 9.4nC 1.2mJ Top View DFN5x6F Bottom View PIN1 PIN1 Top View D S1 S2 S3 G4 8D 7D 6D 5D G S Orderable Part Number AONS1R1A70 Package Type DFN5X6F Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IDSM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Form Tape&Reel Minimum Order Quantity 3000 Maximum 700 ±20 ±30 6.6 4.3 20 1.3 1.1 0.8 0.3 7.5 100 20 104 0.8 4.2 2.7 -55 to 150 Units V V V A A A mJ mJ V/ns W W/°C W °C Typ Max 25 30 45 55 0.9 1.2 Units °C/W °C/W °C/W Rev2.1: December 2021 .aosmd.
Page 1 of 6 AONS1R1A70 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=700V, VGS=
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