Datasheet Details
| Part number | AONV210A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 661.63 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AONV210A60-AlphaOmegaSemiconductors.pdf |
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Overview: AONV210A60 600V, a MOS5 TM N-Channel Power Transistor General.
| Part number | AONV210A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 661.63 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AONV210A60-AlphaOmegaSemiconductors.pdf |
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|
|
• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC,Flyback and LLC topologies • Silver ATX,adapter,TV,lighting, Tele Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 80A < 0.21Ω 34nC 4.3mJ Top View DFN8X8 Bottom View D D Pin1:G S S Orderable Part Number AONV210A60 Package Type DFN8x8_4L_EP1_S G Pin2: Driver Source G S Driver Source Form Tape & Reel Minimum Order Quantity 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Diode reverse recovery VDS=0 to 400V,IF<=20A,Tj=25°C VGS ID IDM IDSM IAR EAR EAS dv/dt dv/dt di/dt TC=25°C Power Dissipation B Derate above 25°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±20 ±30 20 12 80 4.1 3.3 5 12.5 410 100 20 250 208 1.6 8.3 5.3 -55 to 150 300 Units V V V A A A mJ mJ V/ns V/ns A/us W W/°C W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 12 40 0.39 Max Units 15 °C/W 50 °C/W 0.6 °C/W Rev 4.2: March 2024 .aosmd.
Page 1 of 6 AONV210A60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdow
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