Datasheet Details
| Part number | AONV420A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 670.59 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AONV420A60-AlphaOmegaSemiconductors.pdf |
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Overview: AONV420A60 600V, a MOS5 TM N-Channel Power Transistor General.
| Part number | AONV420A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 670.59 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AONV420A60-AlphaOmegaSemiconductors.pdf |
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|
|
• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies • Silver ATX,adapter,TV,lighting,Server power Top View DFN8X8 Bottom View Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested D 700V 44A < 0.42Ω 18nC 2.6mJ D Pin1:G G S S Pin2: Driver Source G S Driver Source Orderable Part Number AONV420A60 Package Type DFN8x8_4L_EP1_S Form Tape & Reel Minimum Order Quantity 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current C TA=25°C Continuous Drain Current TA=70°C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G (TJ=25°C, VGS=10V, IL=2Apk, L=105mH, RGS=25W) MOSFET dv/dt ruggedness Diode reverse recovery VDS=0 to 400V,IF<=10A,Tj=25°C VGS ID IDM IDSM IAR EAR EAS dv/dt dv/dt di/dt Power Dissipation B TC=25°C Derate above 25°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Maximum 600 ±20 ±30 11 8 44 3.1 2.5 2.5 3.1 210 100 20 100 139 1.1 8.3 5.3 -55 to 150 300 Units V V V A A A mJ mJ V/ns V/ns A/us W W/°C W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State RqJA Steady-State RqJC Typ 12 40 0.62 Max Units 15 °C/W 50 °C/W 0.9 °C/W Rev 2.2: March 2024 .aosmd.
Page 1 of 6 AONV420A60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATI
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