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AONV420A70 Datasheet N-channel Power Transistor

Manufacturer: Alpha & Omega Semiconductors

Overview: AONV420A70 700V, a MOS5 TM N-Channel Power Transistor General.

General Description

• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMPS • Charger,PD Adapter,TV,lighting Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 800V 46A < 0.42Ω 21.5nC 2.8mJ Top View DFN8X8 Bottom View D D Pin1:G S S Orderable Part Number AONV420A70 Package Type DFN8x8_4L_EP1_S G Pin2: Driver Source G S Driver Source Form Tape & Reel Minimum Order Quantity 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Diode reverse recovery VDS=0 to 400V,IF<=12A,Tj=25°C IDSM IAR EAR EAS dv/dt dv/dt di/dt TC=25°C Power Dissipation B Derate above 25°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Maximum 700 ±20 ±30 12 7.5 46 2.8 2.2 3.4 5.8 50 100 20 500 156 1.3 8.3 5.3 -55 to 150 300 Typ 12 40 0.51 Max 15 50 0.80 Units V V V A A A mJ mJ V/ns V/ns A/us W W/°C W W/°C °C °C Units °C/W °C/W °C/W Rev.1.2: February 2024 .aosmd.

Page 1 of 6 AONV420A70 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM

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