Datasheet Summary
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AOP610 plementary Enhancement Mode Field Effect Transistor
General Description
The AOP610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses. It is ESD protected. Standard product AOP610 is Pb-free (meets ROHS & Sony 259 specifications). AOP610L is a Green Product ordering option. AOP610 and AOP610L are electrically identical.
Features n-channel p-channel VDS (V) = 30V -30V -6.2A (V GS=10V) ID = 7.7A (VGS=10V) RDS(ON) RDS(ON)...