AOT080A60L Overview
Description
Proprietary αMOS5TM technology - Low RDS(ON) - Optimized switching parameters for better EMI performance - Enhanced body diode for robustness and fast reverse - RreocHoSve2ry.0 and Halogen-Free Compliant Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 700V 140A < 0.08Ω 70nC 9.1mJ.
