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AOT1606L Datasheet 60v N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOT1606L/AOB1606L 60V N-Channel Rugged Planar MOSFET General.

General Description

The AOT1606L/AOB1606L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control.

With low RDS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions.

Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 60V 178A < 6.3mΩ 100% UIS Tested 100% Rg Tested TO220 Top View Bottom View D D Top View D TO-263 D2PAK Bottom View D D G G D S S D G G S S G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C TC=25° C TC=100° C VGS ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG Maximum 60 ±20 178 126 310 12 10 125 781 417 208 2.1 1.3 -55 to 175 Units V V A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 12 48 0.3 Max 15 60 0.36 Units ° C/W ° C/W ° C/W Rev0: May 2011 .aosmd.

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