Datasheet Details
| Part number | AOT5N50 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 393.52 KB |
| Description | 5A N-Channel MOSFET |
| Datasheet | AOT5N50_AlphaOmegaSemiconductors.pdf |
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Overview: AOT5N50/AOTF5N50 500V, 5A N-Channel MOSFET General.
| Part number | AOT5N50 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 393.52 KB |
| Description | 5A N-Channel MOSFET |
| Datasheet | AOT5N50_AlphaOmegaSemiconductors.pdf |
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Product Summary The AOT5N50 & AOTF5N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 600V@150℃ 5A < 1.5W D G D S G DS G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT5N50 AOTF5N50 Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 5 5* 3.3 3.3* 18 2.6 101 203 50 5 TC=25°C Power Dissipation B Derate above 25oC PD 104 35.0 0.8 0.3 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT5N50 65 0.5 AOTF5N50 65 -- Maximum Junction-to-Case RqJC 1.2 3.6 * Drain current limited by maximum junction temperature.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOT5N50 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
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