Datasheet Details
| Part number | AOT7N60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 466.81 KB |
| Description | 7A N-Channel MOSFET |
| Datasheet | AOT7N60_AlphaOmegaSemiconductors.pdf |
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Overview: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General.
| Part number | AOT7N60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 466.81 KB |
| Description | 7A N-Channel MOSFET |
| Datasheet | AOT7N60_AlphaOmegaSemiconductors.pdf |
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Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 700V@150℃ 7A < 1.2W TO-220 Top View TO-220F D G D S G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT7N60 AOTF7N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 7 7* 4.8 4.8* 28 3 135 270 50 5 TC=25°C Power Dissipation B Derate above 25oC PD 192 38.5 1.54 0.3 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT7N60 65 0.5 AOTF7N60 65 -- Maximum Junction-to-Case RqJC 0.65 3.25 * Drain current limited by maximum junction temperature.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOT7N60 | N-Channel MOSFET | INCHANGE |
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|---|---|
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