Datasheet Details
| Part number | AOT9N40 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 252.40 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOT9N40-AlphaOmegaSemiconductors.pdf |
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Overview: AOT9N40 400V,8A N-Channel MOSFET General.
| Part number | AOT9N40 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 252.40 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOT9N40-AlphaOmegaSemiconductors.pdf |
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Product Summary The AOT9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs.These parts are ideal for boost converters and synchronous rectifiers for consumer, tele, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT9N40L Top View TO-220 500V@150℃ 8A < 0.8Ω D DS G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case Symbol RθJA RθCS RθJC G AOT9N40 400 ±30 8 5 22 3.2 150 300 5 132 1 -55 to 150 300 AOT9N40 65 0.5 0.95 Rev 0: Dec 2010 .aosmd.
S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Page 1 of 5 AOT9N40 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V 400 500 0.4 V V/ oC IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Zero Gate Voltage Drain Current Gate-Body leakage current Gate Th
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOT9N40 | N-Channel MOSFET | INCHANGE |
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