Datasheet Details
| Part number | AOTF125A60FDL |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 452.44 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AOTF125A60FDL-AlphaOmegaSemiconductors.pdf |
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Overview: AOTF125A60FDL 600V, a MOS5 TM N-Channel Power Transistor General.
| Part number | AOTF125A60FDL |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 452.44 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AOTF125A60FDL-AlphaOmegaSemiconductors.pdf |
|
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Product Summary • Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery • RoHS 2.0 and Halogen-Free pliant VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • PWM stages (LLC, PSFB,TTF) of Server, Tele, Industrial, UPS, and Solar Inverters 100% UIS Tested 100% Rg Tested TO-220F 700V 56A < 0.125Ω 48nC 6.8mJ D AOTF125A60FDL GDS G S Orderable Part Number AOTF125A60FDL Package Type TO-220F Green Form Tube Minimum Order Quantity 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy G EAS MOSFET dv/dt ruggedness Peak diode reovery dv/dt dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Maximum 600 ±20 14 8 56 7.9 31 555 100 20 52 0.4 -55 to 150 300 Units V V A A mJ mJ V/ns V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Junction-to-Case Symbol RqJA RqJC Maximum 65 2.4 Units °C/W °C/W Rev.1.1: June 2024 .aosmd.
Page 1 of 6 AOTF125A60FDL Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V, TJ=25°C ID=10mA, VGS=0V, TJ=150°C ID=10mA, VGS=0V Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=5V, ID=
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|---|---|
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