AOTF20N60 Overview
Key Specifications
Package: TO-220-3
Mount Type: Through Hole
Max Operating Temp: 150 °C
Min Operating Temp: -55 °C
Description
Product Summary The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 700V@150℃ 20A < 0.37W D G S D G S GD AOT20N60 AOTF20N60 Parameter Symbol AOT20N60 AOTF20N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 20 20* 12 12* 80 6.5 630 1260 5 TC=25°C Power Dissipation B Derate above 25oC PD 417 3.3 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT20N60 65 0.5 AOTF20N60 65 -- Maximum Junction-to-Case RqJC 0.3 2.5 * Drain current limited by maximum junction temperature.
