Datasheet Details
| Part number | AOTF3N80 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 330.63 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOTF3N80-AlphaOmegaSemiconductors.pdf |
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Overview: AOTF3N80 800V, 2.8A N-Channel MOSFET General.
| Part number | AOTF3N80 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 330.63 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOTF3N80-AlphaOmegaSemiconductors.pdf |
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Product Summary The AOTF3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
For Halogen Free add "L" suffix to part number: AOTF3N80L VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested Top View TO-220F 900V@150℃ 2.8A < 4.8Ω D AOTF3N80 S GD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
G AOTF3N80 800 ±30 2.8* 1.8* 9 2.2 72 145 5 35 0.3 -55 to 150 300 AOTF3N80 65 3.6 S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W Rev.1.0 May 2013 .aosmd.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOTF3N80 | N-Channel MOSFET | INCHANGE |
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