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AOTF4126 Datasheet N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOTF4126 100V N-Channel MOSFET SDMOS TM General.

General Description

Product Summary The AOTF4126 is fabricated with SDMOSTM trench technology that bines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior.

This universal technology is well suited for PWM, load switching and general purpose applications.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100% UIS Tested 100% Rg Tested 100V 27A < 24mΩ < 30mΩ TO220F Top View Bottom View D G G DS S DG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current B TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current A TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG S Maximum 100 ±25 27 19 110 6 5 28 39 42 21 2.1 1.4 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 10 48.5 2.9 Max 12 58 3.5 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev1 : May 2012 .aosmd.

Similar Datasheet

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