AOTF454L Overview
Key Specifications
Package: TO-220-3
Mount Type: Through Hole
Max Operating Temp: 150 °C
Min Operating Temp: -55 °C
Description
Product Summary The AOTF454L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=7V) 100% UIS Tested 100% Rg Tested 150V 13A < 94mW < 110mW TO220F Top View Bottom View D G DS S DG Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG G S Maximum 150 ±20 13 8 40 3 2.5 5 1.3 41 16 2.1 1.3 -55 to 150 Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 10 48.5 2.4 Max 12 58 3 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1.0: May 2024 Page 1 of 6 AOTF454L Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 150 V IDSS Zero Gate Voltage Drain Current VDS=150V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 3.4 4 4.6 V ID(ON) On state drain current VGS=10V, VDS=5V 40 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A TJ=125°C 75.5 94 mW 151 188 VGS=7V, ID=10A 84 110 mW gFS Forward Transconductance VDS=5V, ID=10A 20 S VSD Diode Forward Voltage.
