AOTF4N90 Datasheet | Alpha & Omega Semiconductors

Description Product Summary The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number: AOTF4N90L VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested Top View TO-220F 1000V@150℃ 4A < 3.6W Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25o C IDM IAR EAR EAS dv/dt Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Symbol Maximum Junction-to-Ambient A,D Rq JA Maximum Junction-to-Case Rq JC - Drain current limited by maximum junction temperature. AOTF4N90 900 ±30 4- 2.5- 16 2.3 79 158 5 37 0.3 -55 to...