Datasheet Details
| Part number | AOTF6N90 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 554.65 KB |
| Description | 6A N-Channel MOSFET |
| Datasheet | AOTF6N90-AlphaOmegaSemiconductors.pdf |
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Overview: AOTF6N90 900V,6A N-Channel MOSFET General.
| Part number | AOTF6N90 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 554.65 KB |
| Description | 6A N-Channel MOSFET |
| Datasheet | AOTF6N90-AlphaOmegaSemiconductors.pdf |
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Product Summary The AOTF6N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs.
For Halogen Free add "L" suffix to part number: AOTF6N90L VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested Top View TO-220F 1000V@150℃ 6A < 2.2Ω D AOTF6N90 S GD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
G AOTF6N90 900 ±30 6* 3.9* 24 3.3 80 160 5 50 0.4 -55 to 150 300 AOTF6N90 65 2.5 S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W Rev1: Jul 2011 .aosmd.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOTF6N90 | N-Channel MOSFET | INCHANGE |
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