AOTF8N80 Overview
Key Specifications
Package: TO-220-3
Mount Type: Through Hole
Max Operating Temp: 150 °C
Min Operating Temp: -55 °C
Description
Product Summary The AOT8N80L & AOTF8N80 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 900V@150℃ 7.4A < 1.63W Top View TO-220 TO-220F D D G AOT8N80L S D G AOTF8N80 S GD Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G Peak diode recovery dv/dt VDS VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Parameter Symbol Maximum Junction-to-Ambient A,D Maximum Case-to-sink A RqJA RqCS Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.
