Datasheet Details
| Part number | AOTF9N90 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 433.01 KB |
| Description | 9A N-Channel MOSFET |
| Datasheet | AOTF9N90-AlphaOmegaSemiconductors.pdf |
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Overview: AOTF9N90 900V, 9A N-Channel MOSFET General.
| Part number | AOTF9N90 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 433.01 KB |
| Description | 9A N-Channel MOSFET |
| Datasheet | AOTF9N90-AlphaOmegaSemiconductors.pdf |
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Product Summary The AOTF9N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
For Halogen Free add "L" suffix to part number: AOTF9N90L VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested Top View TO-220F 1000V@150℃ 9A < 1.3W D AOTF9N90 S GD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Symbol Maximum Junction-to-Ambient A,D RqJA Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.
G AOTF9N90 900 ±30 9* 6* 34 3.6 194 388 5 50 0.4 -55 to 150 300 AOTF9N90 65 2.5 S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W Rev1.0: May 2024 .aosmd.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOTF9N90 | N-Channel MOSFET | INCHANGE |
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