AOW11N60 Overview
Key Specifications
Package: TO-262-3
Mount Type: Through Hole
Max Operating Temp: 150 °C
Min Operating Temp: -55 °C
Description
The AOW11N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 700V@150℃ 11A < 0.7Ω 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View D G D S S D G G S AOW11N60 C C AOW11N60 600 ±30 11 8.0 39 4.8 345 690 5 272 2.2 -55 to 150 300 AOW11N60 65 0.5 0.46 Units V V A A mJ mJ V/ns W W/ oC ° C ° C Units ° C/W ° C/W ° C/W VGS TC=25° C TC=100° C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS RθJC Single plused avalanche energy G Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds A Rev 0: Jan 2012 Page 1 of 5 Free Datasheet AOW11N60.
