AOW12N50 Overview
Key Specifications
Package: TO-262-3
Mount Type: Through Hole
Max Operating Temp: 150 °C
Min Operating Temp: -55 °C
Description
The AOW12N50 & AOWF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 600V@150℃ 12A < 0.52Ω 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View Top View TO-262F Bottom View D G G D S S D G G D S S D G S C Units V V A A mJ mJ V/ns W W/ oC °C °C IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS RθJC AOW12N50 65 0.5 0.5 250 2 48 5.5 454 908 5 28 0.22 -55 to 150 300 AOWF12N50 65 -4.5 Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Units °C/W °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case * Drain current limited by maximum junction temperature.
