Datasheet Details
| Part number | AOW418 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 276.96 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOW418_AlphaOmegaSemiconductors.pdf |
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Overview: AOW418 100V N-Channel MOSFET SDMOS TM General.
| Part number | AOW418 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 276.96 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOW418_AlphaOmegaSemiconductors.pdf |
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The AOW418 is fabricated with SDMOSTM trench technology that bines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior.
This universal technology is well suited for PWM, load switching and general purpose applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100V 105A < 10mΩ < 12mΩ 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View D G D S S D G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum 100 ±25 105 82 280 9.5 7.5 60 180 333 167 2.1 1.3 -55 to 175 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 11 47 0.36 Max 15 60 0.45 Units °C/W °C/W °C/W Rev0 : July 2010 .aosmd.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOW418 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
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| AOW10N65 | 10A N-Channel MOSFET |
| AOW10T60 | 10A N-Channel MOSFET |
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| AOW11S65 | Power Transistor |