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AOWF412 Datasheet 100v N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOWF412 100V N-Channel MOSFET SDMOS TM General.

General Description

The AOWF412 are fabricated with SDMOSTM trench technology that bines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior.

This universal technology is well suited for PWM, load switching and general purpose applications.

Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100% UIS Tested 100% Rg Tested 100V 30A < 15.8mW < 19.4mW TO-262F D Top View Bottom View G S GD G SD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS,IAR EAS,EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±25 30 20 170 7.8 6 47 110 33 16 2.1 1.3 -55 to 175 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 12 48 Maximum Junction-to-Case Steady-State RqJC 3.7 Max 15 60 4.5 S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev1.0: February 2024 .aosmd.

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AOWF412 Distributor