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D3N50 Datasheet Aod3n50

Manufacturer: Alpha & Omega Semiconductors

Overview: AOD3N50 3A, 500V N-Channel MOSFET General.

General Description

The AOD3N50 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

Key Features

  • VDS (V) = 600V @ 150°C ID = 2.8A RDS(ON) < 3Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! TO-252 D-PAK Top View Bottom View D D G S S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Avalanche Current C C Maximium 500 ±30 2.8 1.8 9.0 2.0 60 120 5 57 0.45 -50 to 150 300 Units V V A A mJ mJ V/ns W W/ C °C °C o TC=25°C TC=100°C ID IDM IAR EAR H Repetitive aval.

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