TF16N50 Datasheet | Alpha & Omega Semiconductors

Description Product Summary The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number: AOT16N50L & AOTF16N50L VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 600V@150℃ 16A < 0.37Ω AOT16N50 AOTF16N50 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT16N50 AOTF16N50 Drain-Source Voltage Gate-Source Voltage ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt IDM IAR EAR EAS dv/dt 16- 11-...