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AA022P1-00 - 18-23 GHz GaAs MMIC Power Amplifier

Datasheet Summary

Description

Alpha’s two-stage balanced K band GaAs MMIC power amplifier has a typical P1 dB of 24.5 dBm with 13 dB associated gain and 11% power added efficiency at 23 GHz.

Features

  • I Single Bias Supply Operation (6 V) I 14 dB Typical Small Signal Gain I 24.5 dBm Typical P1 dB Output Power at 23 GHz I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 Chip Outline 1.700 1.613 1.371 0.086 0.000 0.000 0.520 2.784 3.400 0.329 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm.

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Datasheet preview – AA022P1-00

Datasheet Details

Part number AA022P1-00
Manufacturer Alpha Industries
File Size 139.49 KB
Description 18-23 GHz GaAs MMIC Power Amplifier
Datasheet download datasheet AA022P1-00 Datasheet
Additional preview pages of the AA022P1-00 datasheet.

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Full PDF Text Transcription

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18–23 GHz GaAs MMIC Power Amplifier AA022P1-00 Features I Single Bias Supply Operation (6 V) I 14 dB Typical Small Signal Gain I 24.5 dBm Typical P1 dB Output Power at 23 GHz I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 Chip Outline 1.700 1.613 1.371 0.086 0.000 0.000 0.520 2.784 3.400 0.329 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Description Alpha’s two-stage balanced K band GaAs MMIC power amplifier has a typical P1 dB of 24.5 dBm with 13 dB associated gain and 11% power added efficiency at 23 GHz. The chip uses Alpha’s proven 0.
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