Datasheet Summary
18- 23 GHz GaAs MMIC Power Amplifier
AA022P1-00 Features
I Single Bias Supply Operation (6 V) I 14 dB Typical Small Signal Gain I 24.5 dBm Typical P1 dB Output Power at 23 GHz I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 2010
Chip Outline
1.700 1.613 1.371
0.086 0.000 0.000 0.520 2.784 3.400
Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm.
Description
Alpha’s two-stage balanced K band GaAs MMIC power amplifier has a typical P1 dB of 24.5 dBm with 13 dB associated gain and 11% power added efficiency at 23 GHz. The chip uses Alpha’s proven 0.25 µm...