Click to expand full text
27–31 GHz GaAs MMIC Driver Amplifier
Features
I Single Bias Supply Operation (6 V)
I 14 dB Typical Small Signal Gain
I 16 dBm Typical P1 dB Output Power at 28 GHz
I 0.25 µm Ti/Pd/Au Gates
I 100% On-Wafer RF and DC Testing
I 100% Visual Inspection to MIL-STD-883 MT 2010
Description
Alpha’s two-stage reactively-matched 27–31 GHz GaAs MMIC driver amplifier has typical small signal gain of 14 dB with a typical P1 dB of 16 dBm at 28 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.
AA028P2-00 Datasheet
